Oxide semiconductor memory design and characterization Engineer

As an Oxide semiconductor memory design and characterization Engineer your working domain will be on electrical characterization with focus on understanding of device operations and physics.

What you will do

Semiconductor memories are placed at different levels based on their speed, capacity and cost. The gap between SRAM and DRAM is bridged with different levels of cache. The last level caches significantly contribute to the system performance and energy consumption. Different memory devices are being explored for these applications. Embedded DRAM with the Oxide semiconductor based channels integrated in the 2T0C cell configuration is a promising candidate. The ultra-low off current in Indium Gallium Zinc Oxide (IGZO)-based helps in achieving long retention without the need for an external capacitor. This lowers the refresh rate and hence power consumption, as well reduces the processing complexity.  
Imec is looking for a design and characterization Engineer with experience in transistor characterization and memories devices. The job consists of electrical characterization with focus on understanding of device operations and physics. The learning guides subsequent material/device design, eventually improving device performance. The role also involves designing test structures.

What we do for you

We offer you the opportunity to join one of the world’s premier research centers in nanotechnology at its headquarters in Leuven, Belgium. With your talent, passion and expertise, you’ll become part of a team that makes the impossible possible. Together, we shape the technology that will determine the society of tomorrow.

We are committed to being an inclusive employer and proud of our open, multicultural, and informal working environment with ample possibilities to take initiative and show responsibility. We commit to supporting and guiding you in this process; not only with words but also with tangible actions. Through imec.academy, 'our corporate university', we actively invest in your development to further your technical and personal growth. 

We are aware that your valuable contribution makes imec a top player in its field. Your energy and commitment are therefore appreciated by means of a market appropriate salary with many fringe benefits. 

Who you are

• You have a PhD degree (or a Master degree with at least 3 year of working experience, preferably in the field of memory devices) in Electrical Engineering or Nanotechnology, material science or Physics 
• You have a solid background of electrical engineering. Good knowledge of device physics, technology and lab/fab process is essential. 
• You have strong experience in the electrical characterization of MOSFETs. Experience with Oxide semiconductors is preferred.  
• Basic understanding of memory devices is essential. 
• Knowledge of device design and mask design is preferred. 
• You are a communicative team player, yet you are able to work independently. 
• You like taking initiative; you are persuasive and assertive, while keeping a constructive attitude. 
• You show the flexibility to change between different projects according to changing priorities. 
• Given the international character of imec, a fluent knowledge of English is necessary.